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IRFPS40N50L

MOSFET N-Chan 500V 46 Amp

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SeekIC No. : 00158883 Detail

IRFPS40N50L: MOSFET N-Chan 500V 46 Amp

IRFPS40N50L Data Sheet

floor Price/Ceiling Price

US $ 11.87~12.95 / Piece | Get Latest Price
Part Number:
IRFPS40N50L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~331
  • 331~500
  • Unit Price
  • $12.95
  • $11.87
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Super-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : Super-247


Features:

· Low Gate Charge Qg results in Simple Drive Requirement
· Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
· Fully Characterized Capacitance and Avalanche Voltage and Current
· Low Trr and Soft Diode Recovery
· High Performance Optimised Anti-parallel Diode


Application

· Switch Mode Power Supply (SMPS)
· UninterruptIble Power Supply
· High Speed Power Switching
· ZVS and High Frequency Circuit
· PWM Inverters


Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
46
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
29
IDM Pulsed Drain Current
180
PD @TC = 25°C Power Dissipation
540
W
  Linear Derating Factor
4.3
W/
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
25
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
(1.6mm from case )
300



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