IRFPS38N60L

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : TO-274AA


Description

The IRFPS38N60L is a kind of power MOSFET, VDSS: 600V, RDS(on): 120m, Trr:170ns, ID: 38A. If you want to know more imformation about this IC, please go to our website.

The features of IRFPS38N60L can be summarized as (1)zero voltage switching SMPS; (2)telecom and senrer power supplies DSS; (3)uninterruptible power supplies GOOV 120m; (4)motor control applications; (5)superfast body diode eliminates the need for external diodes in ZVS applications; (6)lower gate charge results in simpler drive requirements; (7)enhanced dv/dt capabilities offer improved ruggedness; (8)higher gate voltage threshold offers improved noise immunity.

The absolute maximum ratings of IRFPS38N60L are (1)ID @ TC = 25°C continuous drain current, VGS @ 10: 38A; (2)ID @ TC = 100°C continuous drain current, VGS as 10: 24 A; (3)pulsed drain current IDM: 150A; (4)PD @ TC = 25°C power dissipation: 540W; (5)PD @ TA = 25°C power dissipation (PCB Mount): 540W; (6)VGS gate-to-source voltage: ±30V; (7)dv/dt peak diode recovery dv/dt: 13V/ns; (8)TJ, TSTG junction and storage temperature range: -55 to +150°C; (9)soldering temperature, for 10 seconds 300 (1 .6mm from case).