MOSFET N-CH 150V 105A SUPER247
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V |
105 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
74 | |
IDM | Pulsed Drain Current |
390 | |
PD @TC = 25°C | Power Dissipation |
441 |
W |
Linear Derating Factor |
2.9 |
W/ | |
VGS | Gate-to-Source Voltage |
± 30 |
V |
EAS | Single Pulse Avalanche Energy |
1610 |
mJ |
IAR | Avalanche Current |
58 |
A |
EAR | Repetitive Avalanche Energy |
38 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
3.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
The HEXFET® Power MOSFETs of the IRFPS3815 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Technical/Catalog Information | IRFPS3815 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 105A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 63A, 10V |
Input Capacitance (Ciss) @ Vds | 6810pF @ 25V |
Power - Max | 441W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 390nC @ 10V |
Package / Case | Super-247-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFPS3815 IRFPS3815 |