MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 141 A | ||
Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-274AA | Packaging : | Tube |
Technical/Catalog Information | IRFPS3810PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 170A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 100A, 10V |
Input Capacitance (Ciss) @ Vds | 6790pF @ 25V |
Power - Max | 580W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 390nC @ 10V |
Package / Case | Super-247-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFPS3810PBF IRFPS3810PBF |