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IRFPS37N50A

MOSFET N-Chan 500V 36 Amp

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SeekIC No. : 00158835 Detail

IRFPS37N50A: MOSFET N-Chan 500V 36 Amp

IRFPS37N50A Data Sheet

floor Price/Ceiling Price

US $ 8.27~9.02 / Piece | Get Latest Price
Part Number:
IRFPS37N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~331
  • 331~500
  • Unit Price
  • $9.02
  • $8.27
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Super-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.13 Ohms
Package / Case : Super-247


Features:

·Low Gate Charge Qg results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss Specified (See AN 1001)


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High Speed Power Switching


Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
36
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
23
IDM Pulsed Drain Current
144
PD @TC = 25°C Power Dissipation
446
W
  Linear Derating Factor
3.6
W/
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
3.5
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



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