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IRFPS30N60K

MOSFET N-Chan 600V 30 Amp

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SeekIC No. : 00166774 Detail

IRFPS30N60K: MOSFET N-Chan 600V 30 Amp

IRFPS30N60K Data Sheet

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Part Number:
IRFPS30N60K
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-274AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-274AA


Features:

· Low Gate Charge Qg results in Simple Drive Requirement
· Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
· Fully Characterized Capacitance and Avalanche Voltage and Current


Application

· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High Speed Power Switching


Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
30
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
19
IDM Pulsed Drain Current
120
PD @TC = 25°C Power Dissipation
450
W
  Linear Derating Factor
3.6
W/
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
13
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
300



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