MOSFET N-Chan 600V 30 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.19 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-274AA | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V |
30 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
19 | |
IDM | Pulsed Drain Current |
120 | |
PD @TC = 25°C | Power Dissipation |
450 |
W |
Linear Derating Factor |
3.6 |
W/ | |
VGS | Gate-to-Source Voltage |
± 30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
13 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 |