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IRFPS29N60L

MOSFET N-Chan 600V 29 Amp

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SeekIC No. : 00166858 Detail

IRFPS29N60L: MOSFET N-Chan 600V 29 Amp

IRFPS29N60L Data Sheet

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Part Number:
IRFPS29N60L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.21 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-274AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.21 Ohms
Package / Case : TO-274AA


Application

·Zero Voltage Switching SMPS
·Telecom and Server Power Supplies
·Uninterruptible Power Supplies
·Motor Control applications




Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
29
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
18
IDM Pulsed Drain Current
110
PD @TC = 25°C Power Dissipation
480
W
  Linear Derating Factor
3.5
W/
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
15
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10
N•m (lbf•in)



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