IRFPF30

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247AC
Continuous Drain Current : 3.6 A
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 3.7 Ohms


Features:






Specifications






Description

The IRFPF30 has six features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is isolated central mounting hole.The fourth one is fast switching.The fifth one is ease of paralleling.The sixth one simple drive requirements.

Third generation HEXFETs of the IRFPF30 from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

The IRFPF30 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 3.6,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 2.3,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 14,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 125,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +150,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .