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IRFPC60LC-P

Features: · Ultra Low Gate Charge· Reduced Gate Drive Requirement· Enhanced 30V Vgs Rating· Reduced Ciss, Coss, Crss· Isolated Central Mounting Hole· Dynamic dv/dt Rated· Repetitive Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS ...

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SeekIC No. : 004377304 Detail

IRFPC60LC-P: Features: · Ultra Low Gate Charge· Reduced Gate Drive Requirement· Enhanced 30V Vgs Rating· Reduced Ciss, Coss, Crss· Isolated Central Mounting Hole· Dynamic dv/dt Rated· Repetitive Avalanche RatedS...

IRFPC60LC-P Data Sheet

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Part Number:
IRFPC60LC-P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Ultra Low Gate Charge
· Reduced Gate Drive Requirement
· Enhanced 30V Vgs Rating
· Reduced Ciss, Coss, Crss
· Isolated Central Mounting Hole
· Dynamic dv/dt Rated
· Repetitive Avalanche Rated


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 10V
15
A
ID @ TC = 100°C Continuous Drain Current, V GS @ 10V
10
IDM Pulsed Drain Current
64
PD @TC = 25°C Power Dissipation
280
W
  Linear Derating Factor
2.2
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
1000
mJ
IAR Avalanche Current
16
A
EAR Repetitive Avalanche Energy
28
mJ
dv/dt Peak Diode Recovery dv/dt
3.0
V/ns
TJ
 Operating Junction and
-55to+150
TSTG Storage Temperature Range  
°C
  Maximum Reflow Temperature
225
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
0.45
°C/W
RCS Case-to-Sink, Flat, Greased Surface
0.24
-
RJA Junction-to-Ambient
-
40



Description

This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device of the IRFPC60LC-P improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.




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