MOSFET N-Chan 600V 11 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.58 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 11 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.0 | |
IDM | Pulsed Drain Current | 44 | |
PD @TC = 25°C | Power Dissipation | 180 | W |
Linear Derating Factor | 1.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±30 | V |
dv/dt | Peak Diode Recovery dv/dt | 4.9 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range | -55 to + 150 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |