IRFP9150

Features:

• 25A, 100V
• r_DS(ON) = 0.150W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance


Specifications

Drain to Source Voltage (Note 1)		IRFP9150	UNITS
Drain to Gate Voltage (RGS = 10kW) (Note 1)	VDS	-100	V
Continuous Drain Current	VDGR	-100	V
TC =100oC	ID	-25	A
Pulsed Drain Current	ID	-18	A
Gate to Source Voltage	IDM	-100	A
Maximum Power Dissipation	VGS	±20	V
Linear Derating Factor	PD	150	W
Single Pulse Avalanche Energy Rating (Note 3)	Eas	1300	mJ
Operating and Storage Temperature	TJ,TSTG	-55 to 150	oC
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	TL	300	oC
Package Body for 10s, See Techbrief 334	Tpkg	260	oC

Description

This advanced power MOSFET of the IRFP9150 is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

The P-Channel IRFP9150 is an approximate electrical complement to the N-channel IRFP150.

Formerly developmental type TA49230.