MOSFET P-CH 100V 23A TO-247AC
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Drain to Source Voltage (Vdss): | 100V | Continuous Drain Current : | 2.1 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 23A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 117 mOhm @ 13A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 97nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1300pF @ 25V | ||
Power - Max: | 140W | Mounting Type: | Through Hole | ||
Package / Case: | TO-247-3 | Supplier Device Package: | TO-247AC |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V |
-23 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
-16 | |
IDM | Pulsed Drain Current |
-76 | |
PD @TC = 25°C | Power Dissipation |
140 |
W |
Linear Derating Factor |
0.91 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
430 |
mJ |
IAR | Avalanche Current |
-11 |
A |
EAR | Repetitive Avalanche Energy |
14 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs of the IRFP9140N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package of the IRFP9140N is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.