Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Continuous Drain Current
: 21 A
Package / Case
: TO-247AC
Resistance Drain-Source RDS (on)
: 0.2 Ohms
Drain-Source Breakdown Voltage
: - 100 V
Features: • 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input ImpedanceSpecifications IRFP9140 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . .. . VDS -100 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. VDGR -100 V
Continuous Drain Current . . . . . . . . . . . . . . . . .. .. . ID -19 A
TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . IDM -12 A
Pulsed Drain (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM -76 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . .. . VGS 20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . .. . . PD 150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 1.2 W/
Single Pulse Avalanche Energy Rating . . . . . . . . . Eas 960 mJ
Operating and Storage Temperature . . . . . . . TJ, TSTG -55to150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . Tpkg 260 DescriptionThis is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type IRFP9140.
IRFP9140 Data Sheet
