IRFP4768-PBF

The IRFP4768-PBF is power MOSFET. The applications of it are:(1)High Efficiency Synchronous Rectification in SMPS; (2)Uninterruptible Power Supply; (3)High Speed Power Switching; (4)Hard Switched and High Frequency Circuits.

The benefits of IRFP4768-PBF can be summarized as:(1)Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.

The absolute maximum ratings of IRFP4768-PBF are:(1)Continuous Drain Current, VGS @ 10V:93A; (2)Continuous Drain Current, VGS @ 10V:66A; (3)Pulsed Drain Current:370A; (4)Maximum Power Dissipation:520W; (5)Linear Derating Factor:3.4W/°C; (6)Gate-to-Source Voltage:±20V; (7)Peak Diode Recovery:24V/ns; (8)Operating Junction and Storage Temperature Range:-55°C to +175°C; (9)Soldering Temperature, for 10 seconds (1.6mm from case):300°C.

If you want to know more information such as the electrical characteristics about the IRFP4768-PBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .