IRFP460P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.27 Ohms


Features:

· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Isolated Central Mounting Hole
· Fast Switching
· Ease of Paralleling



Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, V GS @ 10V	20	A
ID @ TC = 100°C	Continuous Drain Current, V GS @ 10V	13
IDM	Pulsed Drain Current	80
PD @TC = 25°C	Power Dissipation	280	W
	Linear Derating Factor	2.2	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	960	mJ
IAR	Avalanche Current	20	A
EAR	Repetitive Avalanche Energy	28	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55to+150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)
	Maximum Reflow Temperature	230 (Time above 183 °C should not exceed 100s)	°C

Thermal Resistance

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	0.45	°C/W
RCS	Case-to-Sink, Flat, Greased Surface	0.24	-
RJA	Junction-to-Ambient	-	40

Description

Third Generation HEXFET®s of the IRFP460P from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package of the IRFP460P is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

The solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material.