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IRFP460N

MOSFET N-Chan 500V 20 Amp

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SeekIC No. : 00164888 Detail

IRFP460N: MOSFET N-Chan 500V 20 Amp

IRFP460N Data Sheet

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Part Number:
IRFP460N
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.24 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.24 Ohms


Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 10V
20
A
ID @ TC = 100°C Continuous Drain Current, V GS @ 10V
13
IDM Pulsed Drain Current
80
PD @TC = 25°C Power Dissipation
280
W
  Linear Derating Factor
2.2
W/°C
VGS Gate-to-Source Voltage
±30
V
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55to+150
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)



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