MOSFET N-Chan 500V 20 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.27 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, V GS @ 10V |
20 |
A |
ID @ TC = 100°C | Continuous Drain Current, V GS @ 10V |
12 | |
IDM | Pulsed Drain Current |
80 | |
PD @TC = 25°C | Power Dissipation |
280 |
W |
Linear Derating Factor |
2.2 |
W/°C | |
VGS | Gate-to-Source Voltage |
±30 |
V |
EAS | Single Pulse Avalanche Energy |
960 |
mJ |
IAR | Avalanche Current |
20 |
A |
EAR | Repetitive Avalanche Energy |
28 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
3.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
The TO-247 package of the IRFP460LC is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.