IRFP460C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 240 mOhms


Features:

• 20A, 500V, R_DS(on) = 0.24 @V_GS = 10 V
• Low gate charge ( typical 130nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRFP460C	Units
VDSS	Drain-Source Voltage	500	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	20	A
		12.5
IDM	Drain Current - Pulsed (Note 1)	80	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy(Note 2)	1050	mJ
IAR	Avalanche Current (Note 1)	20	A
EAR	Repetitive Avalanche Energy (Note 1)	23.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	235	W
		1.88	W/°C
TJ,TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.1mH, I_AS = 20A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 20A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of the IRFP460C are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of the IRFP460C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections.

Parameters:

Technical/Catalog Information	IRFP460C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	240 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	235W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFP460C IRFP460C