Application·SMPS, UPS, Welding and High Speed Power SwitchingSpecifications Parameter Max. Units ID @ TC=25°C Continuous Drain Current, VGS @ 10V 20 A ID @ TC=100°C Continuous Drain Current, VGS @ 10V 13 IDM Pulsed Drain Current 80 PD @TC = 25°C Power Di...
IRFP460AS: Application·SMPS, UPS, Welding and High Speed Power SwitchingSpecifications Parameter Max. Units ID @ TC=25°C Continuous Drain Current, VGS @ 10V 20 A ID @ TC=100°C Cont...
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Parameter |
Max. |
Units | |
ID @ TC=25°C | Continuous Drain Current, VGS @ 10V |
20 |
A |
ID @ TC=100°C | Continuous Drain Current, VGS @ 10V |
13 | |
IDM | Pulsed Drain Current |
80 | |
PD @TC = 25°C | Power Dissipation |
280 |
W |
Linear Derating Factor |
2.2 |
W/°C | |
VGS | Gate-to-Source Voltage |
±30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
3.8 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
||
Maximum Reflow Temperature | 230 (Time above 183 °C should not exceed 100s) |
°C |
Third Generation HEXFET®s of the IRFP460AS from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package of the IRFP460AS is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application.