IRFP460APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.27 Ohm at 10 V


Description

The IRFP460APBF is a kind of HEXFET Power MOSFET(VDSS/Rds(on) max/ID: 500V/0.27 20A) which can be applied in switch mode power supply ( SMPS ), uninterruptable power supply, high speed power switching, lead-free.

The benefits of IRFP460APBF can be summarized as (1)low gate charge Qg results in simple drive requirement; (2)improved gate, avalanche and dynamic dv/dt ruggedness; (3)fully characterized capacitance and avalanche voltage and current; (4)effective Coss specified.

The absolute maximum ratings of IRFP460APBF are (1)ID @ TC = 25°C continuous drain current, VGS @ 10V: 20A; (2)ID @ TC = 100°C continuous drain current, VGS @ 10V: 13 A; (3)IDM pulsed drain current: 80A; (4)PD @TC = 25°C Power dissipation: 280 W; (5)linear derating factor: 2.2 W/°C; (6)VGS gate-to-source voltage: ± 30 V; (7)dv/dt peak diode recovery dv/dt: 3.8 V/ns; (8)TJ operating junction and TSTG storage temperature range: -55 to + 150; (9)soldering temperature, for 10 seconds 300 (1.6mm from case )°C; (10)mounting torqe, 6-32 or M3 screw 10 lbf*in (1.1N*m).