IRFP450

MOSFET N-Chan 500V 14 Amp

product image

IRFP450 Picture
SeekIC No. : 00151295 Detail

IRFP450: MOSFET N-Chan 500V 14 Amp

floor Price/Ceiling Price

US $ 3.8~5.71 / Piece | Get Latest Price
Part Number:
IRFP450
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $5.71
  • $4.65
  • $4.26
  • $3.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-247AC
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

` TYPICAL RDS(on) = 0.33
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` n GATECHARGE MINIMIZED




Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.




Specifications

Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain- gate Voltage (RGS = 20 k)
500
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 °C
14
A
ID
Drain Current (continuous) at Tc = 100 °C
8.7
A
IDM(•)
Drain Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
190
W
Derating Factor
1.5
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C


(•) Pulse width limited by safe operating area           (1) ISD 14 A, di/dt  130 A/s, VDD  V(BR)DSS, Tj  TJMAX




Description

This power MOSFET of the IRFP450 is designed using the company's consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationIRFP450
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFP450
IRFP450
497 2735 5 ND
49727355ND
497-2735-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Power Supplies - External/Internal (Off-Board)
Resistors
Cables, Wires
Line Protection, Backups
Fans, Thermal Management
View more