IRFP450

MOSFET N-Chan 500V 14 Amp

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IRFP450 Picture
SeekIC No. : 00151295 Detail

IRFP450: MOSFET N-Chan 500V 14 Amp

floor Price/Ceiling Price

US $ 3.8~5.71 / Piece | Get Latest Price
Part Number:
IRFP450
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $5.71
  • $4.65
  • $4.26
  • $3.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-247AC
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

` TYPICAL RDS(on) = 0.33
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` n GATECHARGE MINIMIZED




Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.




Specifications

Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain- gate Voltage (RGS = 20 k)
500
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 °C
14
A
ID
Drain Current (continuous) at Tc = 100 °C
8.7
A
IDM(•)
Drain Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
190
W
Derating Factor
1.5
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C


(•) Pulse width limited by safe operating area           (1) ISD 14 A, di/dt  130 A/s, VDD  V(BR)DSS, Tj  TJMAX




Description

This power MOSFET of the IRFP450 is designed using the company's consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationIRFP450
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 25V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFP450
IRFP450
497 2735 5 ND
49727355ND
497-2735-5



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