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IRFP4410ZPBF

MOSFET MOSFT 100V 97A 9mOhm 83nC Qg

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SeekIC No. : 00149785 Detail

IRFP4410ZPBF: MOSFET MOSFT 100V 97A 9mOhm 83nC Qg

IRFP4410ZPBF Data Sheet

floor Price/Ceiling Price

US $ .88~1.8 / Piece | Get Latest Price
Part Number:
IRFP4410ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.8
  • $1.23
  • $.92
  • $.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 97 A
Mounting Style : Through Hole Package / Case : TO-247AC
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 97 A
Package / Case : TO-247AC


Features:

· Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
· Fully Characterized Capacitance and Avalanche SOA
· Enhanced body diode dV/dt and dI/dt Capability
· Lead-Free


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits


Specifications

Symbol Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 97 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (Silicon Limited) 69
IDM Pulsed Drain Current 390
PD @TC = 25 Maximum Power Dissipation 230 W
  Linear Derating Factor 1.5 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 16 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175  
  Soldering Temperature, for 10 seconds
(1.6mm from case)		 300
  Mounting torque, 6-32 or M3 screw 10lbin(1.1Nm)  



Parameters:

Technical/Catalog InformationIRFP4410ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C97A
Rds On (Max) @ Id, Vgs9 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 4820pF @ 50V
Power - Max230W
PackagingBulk
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-247AC
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP4410ZPBF
IRFP4410ZPBF



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