MOSFET MOSFT 75V 350A 1.85mOhm 380nC Qg
IRFP4368PBF: MOSFET MOSFT 75V 350A 1.85mOhm 380nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 350 A |
Mounting Style : | Through Hole | Package / Case : | TO-247AC |
Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 350 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 250 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | 195 | |
IDM | Pulsed Drain Current | 1280 | |
PD @ TC = 25 | Max. Power Dissipation | 520 | W |
Linear Derating Factor | 3.4 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to 175 | |
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting torque, 6-32 or M3 screw | 10 lb`in (1.1N`m) |
Technical/Catalog Information | IRFP4368PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 195A |
Rds On (Max) @ Id, Vgs | 1.85 mOhm @ 195A, 10V |
Input Capacitance (Ciss) @ Vds | 19230pF @ 50V |
Power - Max | 520W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 570nC @ 10V |
Package / Case | TO-247AC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFP4368PBF IRFP4368PBF |