MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 35.7 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
Parameter | Max. | Units | |
VGS | Gate-to-Source Voltage | ±20 | V |
VGS (TRANSIENT) | Gate-to-Source Voltage | ±30 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 60 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 42 | |
IDM | Pulsed Drain Current | 240 | |
IRP @ TC = 100 | Repetitive Peak Current | 117 | |
PD @TC = 25 | Power Dissipation | 430 | W |
PD @TC = 100 | Power Dissipation | 210 | |
Linear Derating Factor | 2.9 | W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 | |
Soldering Temperature for 10 seconds | 300 | ||
Mounting Torque, 6-32 or M3 Screw | 10lb`in (1.1N`m) | N |
Technical/Catalog Information | IRFP4232PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 35.7 mOhm @ 42A, 10V |
Input Capacitance (Ciss) @ Vds | 7290pF @ 25V |
Power - Max | 430W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 240nC @ 10V |
Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFP4232PBF IRFP4232PBF |