MOSFET MOSFT 200V 65A 25mOhm 70nC Qg
IRFP4227PBF: MOSFET MOSFT 200V 65A 25mOhm 70nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 65 A | ||
Resistance Drain-Source RDS (on) : | 25 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
The IRFP4227PbF is one kind of power MOSFET which designed for sustain;energy recovery and pass switch applications in plasma display panels.It utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient,robust and reliable device for PDP driving applications.
Features of the IRFP4227PbF are:(1)advanced process technology;(2)key parameters optimized for PDP sustain, energy recovery and pass switch applicat-ions;(3)low Qg for fast response;(4)high repetitive peak current capability for reliable operation;(5)short fall & rise times for fast switching;(6)175°C operating junction temperature for improved ruggedness;(7)repetitive avalanche capability for robustness and reliability.
The absolute maximum ratings of the IRFP4227PbF can be summarized as:(1)gate-to-source voltage:±30 V;(2)pulsed drain current:260 A;(3)repetitive peak current:130 A;(4)mounting torque, 6-32 or M3 screw:10lb in (1.1N.m) N;(5)soldering temperature for 10 seconds:300;(6)operating junction and storage temperature range:-40 to + 175.If you want to know more information such as the electrical characteristics about the IRFP4227PbF,please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IRFP4227PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 65A |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 46A, 10V |
Input Capacitance (Ciss) @ Vds | 4600pF @ 25V |
Power - Max | 330W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 98nC @ 10V |
Package / Case | TO-247AC |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFP4227PBF IRFP4227PBF |