MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg
IRFP4110PBF: MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 180 A |
Mounting Style : | Through Hole | Package / Case : | TO-247AC |
Packaging : | Tube |
Symbol | Parameter | Max. | Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 130 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | 120 | |
IDM | Pulsed Drain Current | 670 | |
PD @TC = 25 | Maximum Power Dissipation | 370 | W |
Linear Derating Factor | 2.5 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V/ns |
dv/dt | Peak Diode Recovery | 5.3 | |
TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | |
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
Mounting torque, 6-32 or M3 screw | 10lbin(1.1Nm) |
Technical/Catalog Information | IRFP4110PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
Power - Max | 370W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Package / Case | TO-247AC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFP4110PBF IRFP4110PBF |