IRFP3703

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Manufacturer: International Rectifier
Power - Max: 3.8W
Input Capacitance (Ciss) @ Vds: 8250pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 210A
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 76A, 10V
Gate Charge (Qg) @ Vgs: 209nC @ 10V


Application

·Synchronous Rectification
·Active ORing


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V …	210	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V …	100
IDM	Pulsed Drain Current	1000
PD @TC = 25°C	Power Dissipation	230	W
PD @TA = 25°C	Power Dissipation	3.8
	Linear Derating Factor	1.5	W/°C
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 175	°C