IRFP360LC

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247AC
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.2 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

·Ultra Low Gate Charge
·Reduced Gate Drive Requirement
·Enhanced 30V Vgs Rating
·Reduced Ciss, Coss, Crss
·Isolated Central Mounting Hole
·Dynamic dv/dt Rated
·Repetitive Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, V GS @ 10V	23	A
ID @ TC = 100°C	Continuous Drain Current, V GS @ 10V	14
IDM	Pulsed Drain Current	92
PD @TC = 25°C	Power Dissipation	280	W
	Linear Derating Factor	2.2	W/°C
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy	1200	mJ
IAR	Avalanche Current	23	A
EAR	Repetitive Avalanche Energy	28	mJ
dv/dt	Peak Diode Recovery dv/dt	4.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55to+150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements,faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.

The TO-IRFP360LC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.