Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 150 V
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: TO-247AC
Continuous Drain Current
: 43 A
Features: · Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
43 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
30 |
| IDM |
Pulsed Drain Current |
150 |
| PD @TC = 25°C |
Power Dissipation |
200 |
W |
| |
Linear Derating Factor |
1.3 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
590 |
mJ |
| IAR |
Avalanche Current |
22 |
A |
| EAR |
Repetitive Avalanche Energy |
20 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
DescriptionFifth Generation HEXFET® Power MOSFETs of the IRFP3415PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package of the IRFP3415PbF is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parameters: | Technical/Catalog Information | IRFP3415PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 43A |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 22A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 200W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP3415PBF
IRFP3415PBF
|
IRFP3415PBF Data Sheet
