MOSFET N-CH 150V 43A TO-247AC
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Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
43 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
30 | |
IDM |
Pulsed Drain Current |
150 | |
PD @ TC = 25°C |
Power Dissipation |
200 |
W |
Linear Derating Factor |
1.3 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
590 |
mJ |
IAR |
Avalanche Current |
22 |
A |
EAR |
Repetitive Avalanche Energy |
20 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ |
Operating Junction |
-55 to + 175 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
|
Fifth Generation HEXFET® Power MOSFETs of the IRFP3415 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package of the IRFP3415 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Technical/Catalog Information | IRFP3415 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 43A |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 22A, 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
Power - Max | 200W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 200nC @ 10V |
Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFP3415 IRFP3415 |