Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.54 Ohms
Continuous Drain Current
: 11 A
Package / Case
: TO-3P
Drain-Source Breakdown Voltage
: 400 V
Features: ·11A, 400V, RDS(on) = 0.54? @VGS= 10 V
·Low gate charge ( typical 41 nC)
·Low Crss ( typical 35 pF)
·Fast switching
·100% avalanche tested
·Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
IRFP250B |
Units |
|
VDSS |
Drain-Source Voltage |
400 |
V |
|
ID |
Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100) |
11
7.0 |
A
A |
|
IDM
VGSS
EAS
IAR
EAR
dv/dt |
Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3) |
44
±30
450
11
16.2
5.5 |
A
V
mJ
A
mJ
V/ns
W |
|
PD |
Power Dissipation (TC= 25)
- Derate above 25 |
162
1.3 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
| |
Parameter |
Typ. |
Max. |
Units |
|
RJC
RCS
RJA |
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient |
-
0.24
- |
0.77
-
40 |
/W |
DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar, DMOS technology.
This advanced technology of the IRFP340B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
IRFP340B Data Sheet
