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IRFP2907Z

Features: ` Advanced Process Technology` Ultra Low On-Resistance`175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 170 A ID @ TC = 100 Continuous Drain Current, ...

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IRFP2907Z: Features: ` Advanced Process Technology` Ultra Low On-Resistance`175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID...

IRFP2907Z Data Sheet

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Part Number:
IRFP2907Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

 ` Advanced Process Technology
 ` Ultra Low On-Resistance
 `175  Operating Temperature
 ` Fast Switching
 ` Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 170 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 120
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 90
IDM Pulsed Drain Current 680
PD @ TC = 25 Max. Power Dissipation 310 W
  Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 520 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 690
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25, L=0.13mH, RG = 25, IAS = 90A, VGS =10V.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.


Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRFP2907Z are a 175  junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications  and a wide variety of other applications.




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