IRFP2907PBF

MOSFET

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IRFP2907PBF Picture
SeekIC No. : 00146172 Detail

IRFP2907PBF: MOSFET

floor Price/Ceiling Price

US $ 2.11~4.32 / Piece | Get Latest Price
Part Number:
IRFP2907PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $4.32
  • $2.66
  • $2.2
  • $2.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 209 A
Resistance Drain-Source RDS (on) : 4.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-247AC
Continuous Drain Current : 209 A
Resistance Drain-Source RDS (on) : 4.5 m Ohms


Application

Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free



Specifications

  Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current, VGS @ 10V
209
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
148
IDM
Pulsed Drain Current
840
PD @TC = 25
Power Dissipation
470
W
  Linear Derating Factor
3.1
W/
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
1970
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf`in (1.1N`m)
 



Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRFP2907PbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFP2907PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C209A
Rds On (Max) @ Id, Vgs4.5 mOhm @ 125A, 10V
Input Capacitance (Ciss) @ Vds 13000pF @ 25V
Power - Max470W
PackagingBulk
Gate Charge (Qg) @ Vgs620nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP2907PBF
IRFP2907PBF



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