MOSFET N-CH 75V 209A TO-247AC
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
209 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
148 | |
IDM | Pulsed Drain Current |
840 | |
PD @TC = 25°C | Power Dissipation |
470 |
W |
Linear Derating Factor |
3.1 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
1970 |
mJ |
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR | Repetitive Avalanche Energy |
mJ | |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRFP2907 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRFP2907 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 209A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 125A, 10V |
Input Capacitance (Ciss) @ Vds | 13000pF @ 25V |
Power - Max | 470W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 620nC @ 10V |
Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFP2907 IRFP2907 |