Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 50 A
Drain-Source Breakdown Voltage
: 200 V
Package / Case
: TO-247AC
Resistance Drain-Source RDS (on)
: 40 mOhms
Features: ` Advanced Process Technology
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
TO-247AC
PD - 95010
` Lead-FreeSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current,VGS @ 10V |
50 |
A |
| ID @ TC = 100 |
Continuous Drain Current,VGS @ 10V |
35 |
| IDM |
Pulsed Drain Current |
200 |
| PD @ TC = 25 |
Max. Power Dissipation |
300 |
W |
|
Linear Derating Factor |
2.0 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
560 |
mJ |
| IAR |
Avalanche Current |
50 |
A |
| EAR |
Repetitive Avalanche Energy |
30 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
10 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parameters: | Technical/Catalog Information | IRFP260NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 28A, 10V |
| Input Capacitance (Ciss) @ Vds | 4057pF @ 25V |
| Power - Max | 300W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 234nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP260NPBF
IRFP260NPBF
|
IRFP260NPBF Data Sheet
