IRFP254N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-247AC
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.125 Ohms


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	23	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	16
IDM	Pulsed Drain Current	92
PD @ TC = 25°C	Power Dissipation	220	W
	Linear Derating Factor	1.5	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	300	mJ
IAR	Avalanche Current	14	A
EAR	Repetitive Avalanche Energy	22	mJ
dv/dt	Peak Diode Recovery dv/dt	7.4	V/ns
TJ	Operating Junction	-55 to + 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)	g

Description

Fifth Generation HEXFETs of the IRFP254N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package of the IRFP254N is preferred for  commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.