Position: Home  > All Categories> Integrated Circuits (ICs) > IRFP254B

IRFP254B

Features: `25A, 250V, RDS(on) = 0.14 @VGS= 10 V `Low gate charge ( typical 95 nC)`Low Crss ( typical 60 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 250 V ID Drain Curren...

product image

IRFP254B Picture
See larger image
SeekIC No. : 004377259 Detail

IRFP254B: Features: `25A, 250V, RDS(on) = 0.14 @VGS= 10 V `Low gate charge ( typical 95 nC)`Low Crss ( typical 60 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol...

IRFP254B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFP254B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`25A, 250V, RDS(on) = 0.14 @VGS= 10 V
`Low gate charge ( typical 95 nC)
`Low Crss ( typical 60 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability


Specifications

Symbol
Parameter
IRFP250B
Units
VDSS
 Drain-Source Voltage
250
V
ID
 Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100)
25
15.9
A
A
IDM
VGSS
EAS
IAR
EAR
dv/dt
 Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3)
100
±30
700
25
22.1
1.79
A
V
mJ
A
mJ
V/ns
W
PD
 Power Dissipation (TC= 25)
- Derate above 25
221
1.79
W/
TJ,TSTG
 Operating and Storage Temperature Range
-55 to +150
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

These N-Channel enhancement mode power field effect transistors of the IRFP254B are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology of the IRFP254B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Cables, Wires
821-0814-a
415-0100-150
Optical Inspection Equipment
AA924
A21K4B
Memory Cards, Modules
WT32
VTL5C7
Prototyping Products
AVT4168
DE1
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more