IRFP254B Selling Leads, Price trend, IRFP254B DataSheet download, circuit diagram from SeekIC.com

Features: `25A, 250V, RDS(on) = 0.14 @VGS= 10 V `Low gate charge ( typical 95 nC)`Low Crss ( typical 60 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 250 V ID Drain Curren...

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SeekIC No. : 004377259 Detail

IRFP254B: Features: `25A, 250V, RDS(on) = 0.14 @VGS= 10 V `Low gate charge ( typical 95 nC)`Low Crss ( typical 60 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol...

IRFP254B Data Sheet

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Part Number:: IRFP254B
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

`25A, 250V, R_DS(on) = 0.14 @V_GS= 10 V
`Low gate charge ( typical 95 nC)
`Low Crss ( typical 60 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability

Specifications

Symbol	Parameter	IRFP250B	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C= 100)	25 15.9	A A
I_DM V_GSS E_AS I_AR E_AR dv/dt	Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3)	100 ±30 700 25 22.1 1.79	A V mJ A mJ V/ns W
P_D	Power Dissipation (T_C= 25) - Derate above 25	221 1.79	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of the IRFP254B are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology of the IRFP254B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

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IRFP254B

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