Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current: 10A (Max.) @ VDS= 250V`Low RDS(ON) : 0.108(Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to...
IRFP254A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current: 10A (Max.) @ VDS= 250V`Low RDS(O...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
250 |
V |
ID |
Continuous Drain Current (TC=25) |
25 |
A |
Continuous Drain Current (TC=100) |
15.9 | ||
IDM VGS EAS IAR EAR dv/dt |
Drain Current-Pulsed(1) Gate-to-Source Voltage Single Pulsed Avalanche Energy(2) Avalanche Current(1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt(2) |
100 ±30 781 25 22.1 4.8 |
A V mJ A mJ V/ns |
PD |
Total Power Dissipation (TC =25) Linear Derating Factor |
221 1.79 |
W W/ |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |