IRFP254

MOSFET N-Chan 250V 23 Amp

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IRFP254 Picture
SeekIC No. : 00158761 Detail

IRFP254: MOSFET N-Chan 250V 23 Amp

floor Price/Ceiling Price

US $ 3.22~3.76 / Piece | Get Latest Price
Part Number:
IRFP254
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~331
  • 331~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $3.76
  • $3.45
  • $3.31
  • $3.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-247AC
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available



Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 ID 23 A
TC = 100 15
Pulsed Drain Currenta IDM 92
Linear Derating Factor   1.5 W/
Single Pulse Avalanche Energyb EAS 410 mJ
Repetitive Avalanche Currenta IAR 23 A
Repetitive Avalanche Energya EAR 19 mJ
Maximum Power Dissipation TC = 25 PD 190 W
Peak Diode Recovery dV/dtc dV/dt 4.8 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   300d
Mounting Torque 6-32 or M3 screw   10 lbf ` in
1.1 N ` m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 , L = 1.2 mH, RG = 25 , IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 180 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply



Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package of the IRFP254 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.




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