MOSFET N-Chan 250V 23 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 23 A | ||
Resistance Drain-Source RDS (on) : | 0.14 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
PARAMETER | SYMBOL | LIMIT | UNIT | ||
Drain-Source Voltage | VDS | 250 | V | ||
Gate-Source Voltage | VGS | ± 20 | |||
Continuous Drain Current | VGS at 10 V | TC = 25 | ID | 23 | A |
TC = 100 | 15 | ||||
Pulsed Drain Currenta | IDM | 92 | |||
Linear Derating Factor | 1.5 | W/ | |||
Single Pulse Avalanche Energyb | EAS | 410 | mJ | ||
Repetitive Avalanche Currenta | IAR | 23 | A | ||
Repetitive Avalanche Energya | EAR | 19 | mJ | ||
Maximum Power Dissipation | TC = 25 | PD | 190 | W | |
Peak Diode Recovery dV/dtc | dV/dt | 4.8 | V/ns | ||
Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | |||
Soldering Recommendations (Peak Temperature) | for 10 s | 300d | |||
Mounting Torque | 6-32 or M3 screw | 10 | lbf ` in | ||
1.1 | N ` m |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package of the IRFP254 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.