IRFP250NPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 30 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 75 mOhms


Features:

Advanced Process Technology
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	30	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	21
IDM	Pulsed Drain Current	120
PD @TC = 25	Power Dissipation	214	W
	Linear Derating Factor	1.4	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	315	mJ
IAR	Avalanche Current	30	A
EAR	Repetitive Avalanche Energy	21	mJ
dv/dt	Peak Diode Recovery dv/dt	8.6	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

The IRFP250NPbF is a HEXFET power MOSFET.Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRFP250NPbF are:(1)advanced process technology; (2)ease of paralleling; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)fully avalanche rated; (7)lead-free;(8)simple drive requirements.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

The absolute maximum ratings of the IRFP250NPbF can be summarized as:(1)soldering temperature, for 10 seconds:300;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175;(4)pulsed drain current:120 A;(5)gate-to-source voltage:±20V;(6)power dissipation:214W.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims IRFP250NPbF or any other problems that may result from applications of information, products or circuits described in the datasheets.

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Parameters:

Technical/Catalog Information	IRFP250NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	75 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	2159pF @ 25V
Power - Max	214W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	123nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFP250NPBF IRFP250NPBF