MOSFET N-Chan 200V 30 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.085 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
IRFP250 | UNITS | ||
Drain to Source Voltage (Note 1) | VDS | 200 | V |
Drain to Gate Voltage (RGS = 20k) (Note 1) | VDGR | 200 | V |
Continuous Drain Current | ID | 33 | A |
TC = 100 | ID | 21 | A |
Pulsed Drain Current (Note 3) | IDM | 130 | A |
Gate to Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation | PD | 180 | W |
Linear Derating Factor | 1.44 | W/ | |
Single Pulse Avalanche Energy Rating (Note 4) | EAS | 810 | mJ |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
Maximum Temperature for Soldering | |||
Leads at 0.063in (1.6mm) from Case for 10s | TL | 300 | |
Package Body for 10s, See Techbrief 334 | Tpkg | 260 |
Technical/Catalog Information | IRFP250 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 33A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 16A, 10V |
Input Capacitance (Ciss) @ Vds | 2850pF @ 25V |
Power - Max | 180W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 158nc @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFP250 IRFP250 497 2639 5 ND 49726395ND 497-2639-5 |