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IRFP246

Features: • 15A and 14A, 275V and 250V• rDS(ON) = 0.28W and 0.34W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• 275V, 250VDC Rated, 120VAC L...

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SeekIC No. : 004377251 Detail

IRFP246: Features: • 15A and 14A, 275V and 250V• rDS(ON) = 0.28W and 0.34W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds...

IRFP246 Data Sheet

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Part Number:
IRFP246
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 15A and 14A, 275V and 250V
• rDS(ON) = 0.28W and 0.34W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250VDC Rated, 120VAC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

    IRFP244 IRFP245 IRFP246 IRFP247 UNITS
Drain to Source Voltage (Note 1) VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR 250 2502 275 275 V
Continuous Drain Current. ID 15 14 15 14 A
TC = 100oC. ID 9.7 8.8 9.7 8.8 A
Pulsed Drain Current (Note 3) IDM 60 56 60 56 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 150 150 150 150 W
Linear Derating Factor   1.2 1.2 1.2 1.2 W/oC
Single Pulse Avalanche Energy Rating (Note 4) EAS 550 550 550 550 mJ
Operating and Storage Temperature
Maximum Temperature for Soldering		 TJ, TSTG -55 to 150 oC
Leads at 0.063in (1.6mm) from Case for 10s TL 300 300 300 300 oC
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 oC
1. TJ = 25oC to 125oC.


Description

These are N-Channel enhancement mode silicon gate power field effect transistors IRFP246. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRFP246




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