IRFP244PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 30 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 280 mOhms at 10 V


Features:






Specifications






Description

      The features of IRFP244PbF are Dynamic dv/dt Rating, Repetitive Avalanche Rated, isolated Central Mounting Hole, Fast Switching, Ease of Paralleling,  Simple Drive Requirements, Lead-Free.
      The third Generation HEXFETs from lnternational Rectifier IRFP244PbF provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
      The parameters of the  IRFP244PbF are VGS (Gate-to-Source Voltage)=±20V, ID @ TC= 25°C   (Continuous Drain Current, VGS @ 10V)=15A, ID @ TC = 100°C (Continuous Drain Current, VGS @ 10V )=9.7A,  IDM (Pulsed Drain Current)=60A, EAS (Single Pulse Avalanche Energy)=550mJ, PD (@TA = 25°C Power Dissipation)=60W, IAR( Avalanche Current)= 15A, EAR (Repetitive Avalanche Energy)=15mJ, dv/dt( Peak Diode Recovery dv/dt) =4.8 V/ns, TJ (Operating Junction and)= -55  to + 150°C, TSTG( Storage Temperature Range Soldering Temperature IRFP244PbF, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=0.83°C/W, RJA( Junction-to-Ambient )=40°C/W.