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IRFP244B

Features: `16A, 250V, RDS(on) = 0.28 @VGS = 10 V`Low gate charge ( typical 47 nC)`Low Crss ( typical 30 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 250 V ID Drain Curren...

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IRFP244B: Features: `16A, 250V, RDS(on) = 0.28 @VGS = 10 V`Low gate charge ( typical 47 nC)`Low Crss ( typical 30 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol...

IRFP244B Data Sheet

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Part Number:
IRFP244B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

`16A, 250V, RDS(on)  = 0.28 @VGS  = 10 V
`Low gate charge ( typical  47 nC)
`Low Crss ( typical  30 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability


Specifications

Symbol
Parameter
IRFP250B
Units
VDSS
 Drain-Source Voltage
250
V
ID
 Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100)
16
10.1
A
A
IDM
VGSS
EAS
IAR
EAR
dv/dt
 Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3)
64
±30
480
16
18
5.5
A
V
mJ
A
mJ
V/ns
W
PD
 Power Dissipation (TC= 25)
- Derate above 25
180
1.45
W/
TJ,TSTG
 Operating and Storage Temperature Range
-55 to +150
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
 
Parameter
Typ.
Max.
Units
RJC
RCS
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
0.24
-
0.69
-
40
/W



Description

These N-Channel enhancement mode power field effect transistors IRFP244B are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology IRFP244B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.




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