IRFP244

MOSFET N-Chan 250V 15 Amp

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IRFP244 Picture
SeekIC No. : 00158648 Detail

IRFP244: MOSFET N-Chan 250V 15 Amp

floor Price/Ceiling Price

US $ 3.53~4.12 / Piece | Get Latest Price
Part Number:
IRFP244
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~331
  • 331~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $4.12
  • $3.77
  • $3.62
  • $3.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 15 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

• 15A and 14A, 275V and 250V
• rDS(ON) = 0.28W and 0.34W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250VDC Rated, 120VAC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

    IRFP244 IRFP245 IRFP246 IRFP247 UNITS
Drain to Source Voltage (Note 1) VDS 250 250 275 275 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR 250 2502 275 275 V
Continuous Drain Current. ID 15 14 15 14 A
TC = 100oC. ID 9.7 8.8 9.7 8.8 A
Pulsed Drain Current (Note 3) IDM 60 56 60 56 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 150 150 150 150 W
Linear Derating Factor   1.2 1.2 1.2 1.2 W/oC
Single Pulse Avalanche Energy Rating (Note 4) EAS 550 550 550 550 mJ
Operating and Storage Temperature
Maximum Temperature for Soldering
TJ, TSTG -55 to 150 oC
Leads at 0.063in (1.6mm) from Case for 10s TL 300 300 300 300 oC
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 oC
1. TJ = 25oC to 125oC.


Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRFP244 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRFP244




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