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IRFP2410

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 IDM Pulsed Drain Current 240 PD @ TC = 25°C Power Dissipation 230 W Linear Derating ...

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IRFP2410: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 IDM Pul...

IRFP2410 Data Sheet

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Part Number:
IRFP2410
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter

Max.
Units
ID @ TC = 25°C
 Continuous Drain Current, VGS @ 10V
61
A
ID @ TC = 100°C
 Continuous Drain Current, VGS @ 10V
43
IDM
 Pulsed Drain Current
240
PD @ TC = 25°C
 Power Dissipation
230
W
 Linear Derating Factor
1.5
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
830
mJ
IAR
 Avalanche Current
37
A
EAR
 Repetitive Avalanche Energy
23
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
TJ
 Operating Junction
-55 to + 175
TSTG
 Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
 Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
g



Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs of the IRFP2410 are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-247 package of the IRFP2410 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.




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