Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 IDM Pulsed Drain Current 240 PD @ TC = 25°C Power Dissipation 230 W Linear Derating ...
IRFP2410: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 IDM Pul...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
61 |
A |
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
43 | |
IDM |
Pulsed Drain Current |
240 | |
PD @ TC = 25°C |
Power Dissipation |
230 |
W |
Linear Derating Factor |
1.5 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
830 |
mJ |
IAR |
Avalanche Current |
37 |
A |
EAR |
Repetitive Avalanche Energy |
23 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ |
Operating Junction |
-55 to + 175 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
g |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs of the IRFP2410 are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-247 package of the IRFP2410 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.