IRFP23N50LPBF, US $ 2.91-4.29 , Vishay/Siliconix, IRFP23N50LPBF DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149842 Detail

IRFP23N50LPBF: MOSFET N-Chan 500V 23 Amp

IRFP23N50LPBF Data Sheet

US $ 2.91~4.29 / Piece | Get Latest Price

Part Number:: IRFP23N50LPBF
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	23 A
Resistance Drain-Source RDS (on) :	0.19 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AC	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-247AC
Continuous Drain Current : 23 A

Features:

·Super Fast body diode eliminates the need for external diodes in ZVS applications.
·Lower Gate charge results in simpler drive requirements.
·Enhanced dv/dt capabilities offer improved ruggedness.
·Higher Gate voltage threshold offers improved noise immunity

Application

·Zero Voltage Switching SMPS
·Telecom and Server Power Supplies
·Uninterruptible Power Supplies
·Motor Control applications
·Lead-Free

Specifications

	Parameter	Max.	Units
I_D @ T_C=25	Continuous Drain Current VGS @ 10V	23	A
I_D @ T_C=100	Continuous Drain Current VGS @ 10V	15
I_DM	Pulsed Drain Current	92
P_D @ T_C = 25	Max. Power Dissipation	370	W
	Linear Derating Factor	2.9	W/
V_GS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	14	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10lb`in (1.1N`m)

Notes:
Repetitive Rating; Pulse width limited by max.junction temperature.(See Fig. 11).
Starting T_J= 25, L= 1.5mH,R_G= 25Ω, I_AS= 23A, dv/dt = 14V/ns. (See Figure 12).
I_SD 23A, di/dt 430A/s, V_DD V(BR)DSS, T_J 150

IRFP23N50LPBF

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