MOSFET N-Chan 600V 22 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 22 A | ||
Resistance Drain-Source RDS (on) : | 0.24 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AC | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
22 |
A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V |
14 | |
IDM | Pulsed Drain Current |
88 | |
PD @TA = 25 | Power Dissipation |
370 |
W |
Linear Derating Factor |
2.9 |
mW/ | |
VGS | Linear Derating Factor |
±300 |
V |
dv/dt | Peak Diode Recovery dv/dt |
15 |
V/ns |
TJ,TSTG | Junction and Storage Temperature Range |
-55 to +150 |
|
Soldering Temperature, for 10 seconds (1.6mm from case ) |
300 |