IRFP15N60L

The IRFP15N60L is designed as one kind of SMPS MOSFETs with typical applications include zero voltage switching SMPS, telecom and server power supplies and uninterruptible power supplies and motor control applications.

IRFP15N60L has four features and benefits. (1)Super fast body diode eliminates the need for external diodes in ZVS applications. (2)Lower gate charge results in simpler drive requirements. (3)Enhanced dv/dt capabilities offer improved ruggedness. (4)Higher gate voltage threshold offers improved noise immunity. Those are all the main features.

Some absolute maximum ratings IRFP15N60L have been concluded into several points as follow. (1)Its continuous drain current at 10V would be 15A at Tc=25°C and it would be 9.7A at 100°C. (2)Its pulsed drain current would be 60A. (3)Its power dissipation would be 280W/°C. (4)Its linear derating factor would be 2.3W/°C. (5)Its gate to source voltage would be +/-30V. (6)Its peak diode recovery dv/dt would be 10V/ns. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. (8)Its soldering temperature for 10 seconds would be 300°C (1.6mm from case). (9)Its mounting torque, 6-32 or M3 screw would be 1.1(10)N.m(lbf.in). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRFP15N60L are concluded as follow. (1)Its continuous source current body diode would be max 15A. (2)Its pulsed source current body diode would be max 60A. (3)Its diode forward voltage would be 1.5V. (4)Its reverse recovery time would be typ 130ns and max 200ns. (5)Its reverse recovery charge would be typ 450nC and max 670nC. (6)Its reverse recovery current would be typ 5.8A and max 8.7A. (7)Its drain to source breakdown voltage would be min 600V. (8)Its breakdown voltage temperature coefficient would be typ 0.39V/°C. And so on. If you have any question or suggestion or want to know more information please contact us for IRFP15N60L details. Thank you!