MOSFET N-CH 100V 46A TO-247AC
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Parameter |
Max. |
Units | |
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
46 |
A |
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
32 | |
IDM |
Pulsed Drain Current |
230 | |
PD @TC = 25 |
Power Dissipation |
140 |
W |
Linear Derating Factor |
0.91 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
IAR |
Avalanche Current |
28 |
A |
EAR |
Repetitive Avalanche Energy |
20 |
mJ |
dv/dt |
eak Diode Recovery dv/dt |
5.8 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
||
Mounting torqe, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRFP150VPbF are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package IRFP150VPbF is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolated mounting hole.
Technical/Catalog Information | IRFP150VPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 46A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 28A, 10V |
Input Capacitance (Ciss) @ Vds | 3130pF @ 25V |
Power - Max | 140W |
Packaging | Bag |
Gate Charge (Qg) @ Vgs | 130nC @ 10V |
Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFP150VPBF IRFP150VPBF |